Quinas Technology, a spinout from Lancaster University, has been recognized as the Best of Show in the Most Innovative Flash Memory Startup category at the Flash Memory Summit in Santa Clara, CA. ULTRARAMâ„¢ memory, invented by Professor Manus Hayne, combines the high performance of dynamic random-access memory (DRAM) with the non-volatility of flash, surpassing the capabilities of traditional memory technologies.
ULTRARAM has the unique ability to store data for over 1,000 years, outperforming flash memory. Additionally, it offers fast read and write speeds and consumes lower energy compared to DRAM. This breakthrough is made possible by leveraging the quantum-mechanical effect of resonant tunneling in a triple-barrier resonant tunneling structure.
The commercial objective of Quinas Technology is to develop ULTRARAM into a product that outperforms DRAM. By combining speed, endurance, retention, and energy efficiency in a single memory concept, ULTRARAM has the potential to provide significant value for future customer workloads.
The recognition received from the Flash Memory Summit validates the disruptive impact of compound semiconductors in ULTRARAM. Quinas Technology’s CEO, James Ashforth-Pook, expressed his delight at receiving this award from the leading memory conference.
With the advancements in memory tiering technology, ULTRARAM can revolutionize the field of computer memory by delivering superior performance, efficiency, and non-volatility. This breakthrough has the potential to redefine the capabilities of digital electronics and computing.
For more information, visit the official website of Quinas Technology.